Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry - Publication - Bridge of Knowledge

Your account

login

Search

Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry

Abstract

Polycrystalline boron-doped diamond is a promising material for high-power aqueous electrochemical applications in bioanalytics, catalysis, and energy storage. The chemical vapor deposition (CVD) process of diamond forma-tion and doping is totally diversified by using high kinetic energies of deu-terium substituting habitually applied hydrogen. The high concentration of deuterium in plasma induces atomic arrangements and steric hindrance during synthesis reactions, which in consequence leads to a preferential (111) texture and more effective boron incorporation into the lattice, reaching a one order of magnitude higher density of charge carriers. This provides the surface reconstruction impacting surficial populations of CC dimers, CH, CO groups, and COOH termination along with enhanced kinetics of their abstraction, as revealed by high-resolution core-level spectroscopies. A series of local densities of states were computed, showing a rich set of highly occupied and localized surface states for samples deposited in deuterium, negating the connotations of band bending. The introduction of enhanced incorporation of boron into (111) facet of diamond leads to the manifestation of surface electronic states below the Fermi level and above the bulk valence band edge. This unique electronic band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry

Citations

  • 4

    CrossRef

  • 0

    Web of Science

  • 3

    Scopus

Authors (10)

Cite as

Full text

download paper
downloaded 25 times
Publication version
Accepted or Published Version
DOI:
Digital Object Identifier (open in new tab) 10.1002/smll.202208265
License
Creative Commons: CC-BY open in new tab

Keywords

Details

Category:
Articles
Type:
artykuły w czasopismach
Published in:
SMALL no. 19, pages 1 - 20,
ISSN: 1613-6810
Language:
English
Publication year:
2023
Bibliographic description:
Sobaszek M., Brzhezinskay M., Olejnik A., Mortet V., Alam M., Mirosław S., Ficek M., Gazda M., Weiss Z., Bogdanowicz R.: Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry// SMALL -Vol. 19,iss. 26 (2023), s.1-20
DOI:
Digital Object Identifier (open in new tab) 10.1002/smll.202208265
Sources of funding:
Verified by:
Gdańsk University of Technology

Referenced datasets

seen 75 times

Recommended for you

Enhanced boron doping of thin diamond films grown in deuterium-rich microwave plasma

2019

Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films

2017

Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio

2015

Enhanced electrochemical kinetics of highly-oriented (111)-textured boron-doped diamond electrodes induced by deuterium plasma chemistry

2021
Meta Tags