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Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry
Abstract
Polycrystalline boron-doped diamond is a promising material for high-power aqueous electrochemical applications in bioanalytics, catalysis, and energy storage. The chemical vapor deposition (CVD) process of diamond forma-tion and doping is totally diversified by using high kinetic energies of deu-terium substituting habitually applied hydrogen. The high concentration of deuterium in plasma induces atomic arrangements and steric hindrance during synthesis reactions, which in consequence leads to a preferential (111) texture and more effective boron incorporation into the lattice, reaching a one order of magnitude higher density of charge carriers. This provides the surface reconstruction impacting surficial populations of CC dimers, CH, CO groups, and COOH termination along with enhanced kinetics of their abstraction, as revealed by high-resolution core-level spectroscopies. A series of local densities of states were computed, showing a rich set of highly occupied and localized surface states for samples deposited in deuterium, negating the connotations of band bending. The introduction of enhanced incorporation of boron into (111) facet of diamond leads to the manifestation of surface electronic states below the Fermi level and above the bulk valence band edge. This unique electronic band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry
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Authors (10)
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Maria Brzhezinskay dr habil
- Helmholtz-Zentrum Berlin für Materialien und Energie
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Vincent Mortet PhD
- Czech Technical University in Prague
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Mahebub Alam
- Czech Technical University in Prague
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Sawczak Mirosław dr hab. inż.
- Instytut Maszyn Przepływowych PAN
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Zdenek Weiss PhD
- Institute of Physics of the Czech Academy of Sciences
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/smll.202208265
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Details
- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
-
SMALL
no. 19,
pages 1 - 20,
ISSN: 1613-6810 - Language:
- English
- Publication year:
- 2023
- Bibliographic description:
- Sobaszek M., Brzhezinskay M., Olejnik A., Mortet V., Alam M., Mirosław S., Ficek M., Gazda M., Weiss Z., Bogdanowicz R.: Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry// SMALL -Vol. 19,iss. 26 (2023), s.1-20
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/smll.202208265
- Sources of funding:
- Verified by:
- Gdańsk University of Technology
Referenced datasets
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