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Abstract
Interferometry is a desirable method for in-situ measurement of thin, dielectric film growth, as it don't modify conditions of film deposition. Here we present interferometrical measurements of thickness of doped diamond films during Chemical Vapor Deposition (CVD) process. For this purpose we used a semiconductor laser with a 405nm wavelength. Additional ex-situ measurement using spectral interferometry and ellipsometry have been performed. We found that doping diamond with boron does not cause degradation of interference of light inside the film. To our knowledge, this is the first study of optical monitoring of boron doped, polycrystalline diamond films deposition.
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- Category:
- Articles
- Type:
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Published in:
-
Photonics Letters of Poland
no. 5,
pages 140 - 142,
ISSN: 2080-2242 - Language:
- English
- Publication year:
- 2013
- Bibliographic description:
- Kraszewski M., Bogdanowicz R.: In-situ optical diagnostics of boron-doped diamond films growth// Photonics Letters of Poland. -Vol. 5., nr. 4 (2013), s.140-142
- Verified by:
- Gdańsk University of Technology
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