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Abstract
One of the method of electronic device quality and reliability evaluation is observation of its inherent noise. The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are commercially available diodes with reverse voltage UR = 600 V. The RTS was observed during device stress by applying high voltage for several minutes and the change in signal parameters were studied.
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- Category:
- Articles
- Type:
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Published in:
-
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej
pages 103 - 106,
ISSN: 1425-5766 - Language:
- English
- Publication year:
- 2014
- Bibliographic description:
- Szewczyk A., Stawarz-Graczyk B.: Investigation of RTS Noise in Reverse Polarized Silicon Carbide Schottky Diodes// Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej. -., nr. 40 (2014), s.103-106
- Verified by:
- Gdańsk University of Technology
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