Low frequency noise and trap density in GaN/AlGaN field effect transistors - Publication - Bridge of Knowledge

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Low frequency noise and trap density in GaN/AlGaN field effect transistors

Abstract

Citations

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Authors (11)

  • Photo of P. Sai

    P. Sai

  • Photo of J. Jorudas

    J. Jorudas

  • Photo of M. Dub

    M. Dub

  • Photo of M. Sakowicz

    M. Sakowicz

  • Photo of V. Jakštas

    V. Jakštas

  • Photo of D. But

    D. But

  • Photo of P. Prystawko

    P. Prystawko

  • Photo of G. Cywinski

    G. Cywinski

  • Photo of I. Kašalynas

    I. Kašalynas

  • Photo of W. Knap

    W. Knap

  • Photo of S. Rumyantsev

    S. Rumyantsev

Cite as

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Details

Category:
Magazine publication
Type:
Magazine publication
Published in:
APPLIED PHYSICS LETTERS no. 115, edition 18,
ISSN: 0003-6951
ISSN:
0003-6951
Publication year:
2019
DOI:
Digital Object Identifier (open in new tab) 10.1063/1.5119227
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