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Structure of the interlayer between Au thin film and Si-substrate: Molecular Dynamics simulations

Abstract

Interaction between 2, 3, 5 and 7 atomic layers of gold and a (111) silicon surface was investigated with the molecular dynamics simulation method. The simulation of the diffusion interaction between gold and silicon in the temperature range 425-925 K has been carried out. The peculiarities of the concentration changes of the interacting components and the atomic density at the boundary of two phases in the direction perpendicular to the crystalline surface were established. By means the formalism of quasi two dimensional partial pair correlation functions the atomic structure of the diffusion region was analyzed. The formation of the alloy of eutectic composition within the gold-silicon interlayer was established. It was shown that the inter-phase mixing in various temperature intervals occurred according to different diffusion mechanisms

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Category:
Articles
Type:
artykuły w czasopismach
Published in:
Materials Research Express no. 7, pages 1 - 16,
ISSN: 2053-1591
Language:
English
Publication year:
2020
Bibliographic description:
Plechystyy V., Shtablavyi I., Winczewski S., Rybacki K., Mudry S., Rybicki J.: Structure of the interlayer between Au thin film and Si-substrate: Molecular Dynamics simulations// Materials Research Express -Vol. 7,iss. 2 (2020), s.1-16
DOI:
Digital Object Identifier (open in new tab) 10.1088/2053-1591
Verified by:
Gdańsk University of Technology

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