Search
Filters
total: 15
Best results in : Research Potential Pokaż wszystkie wyniki (14)
Search results for: INTERFACE RECOMBINATION
-
Zespół Fizyki Materii Molekularnej
Research PotentialGłówną tematyką badań Zespołu Fizyki Materii Molekularnej jest wyjaśnianie struktury i własności fizycznych układów molekularnych oraz hybrydowych (materiał organiczny / materiał nieorganiczny)
-
Zespół organicznych ogniw fotowoltaicznych i fotodetektorów
Research PotentialTematyka badawcza Zespołu OOFiF związana jest z własnościami fotowoltaicznymi wielowarstwowych układów zbudowanych z organicznych i nieorganicznych warstw nanoszonych techniką próżniową lub z roztworu.
-
Zespół Fotofizyki Układów Molekularnych
Research PotentialTematyka badawcza Zespołu jest związana z badaniem stanów wzbudzania elektronowego w układach molekularnych oraz podstawowych procesów elektronowych limitujących działanie ograniczonych diod elektroluminescencyjnych i ogniw fotowoltaicznych - pod kątem polepszenia ich parametrów technicznych.
Best results in : Business Offer Pokaż wszystkie wyniki (1)
Search results for: INTERFACE RECOMBINATION
-
Laboratorium Nanomateriałów CZT
Business OfferBadanie właściwość powierzchni z wykorzystaniem mikroskopu sił atomowych
Other results Pokaż wszystkie wyniki (19)
Search results for: INTERFACE RECOMBINATION
-
The field–dependent interface recombination velocity for organic–inorganic heterojunction
PublicationWe have derived an analytical formula which describes the field–dependent interface recombination velocity for the boundary of two materials characterized by different permittivities. The interface recombination of charge carriers has been considered in the presence of image force Schottky barrier. We suggest that this effect may play an important role in the loss of current for organic–inorganic hybrid heterojunctions. It has...
-
Electrostatic interface recombination in the system of disordered materials characterized by different permittivities
PublicationWe report on the analysis of an electrostatic interface recombination in a system consisting of disordered organic materials. This process is a consequence of the polarization effect which takes place at the interface of two phases characterized by different permittivities. In this paper, the impact of tail and deep localized states on the recombination order is demonstrated. We also discuss the influence of temperature on this...
-
Modeling the electrical characteristics of P3HT:PCBM bulk heterojunction solar cells: Influence of the interface recombination
PublicationThe interface recombination of charge carriers located in the material with lower permittivity (Szmytkowski 2009 Chem.Phys.Lett. 470 123) has been implemented for the first time to calculate the electrical characteristics of the donor-acceptor P3HT:PCBM bulk heterojunction solar cell. In order to estimate the photocurrent density in this system, a simple analytical formula has been derived. We have obtained a very good agreement...
-
On the tendency of temperature and electric field dependences of interface recombination in P3HT:PCBM organic bulk heterojunction solar cells
PublicationWe demonstrate theoretical explanation of the temperature and electric field dependences of recombination coefficients in an organic P3HT:PCBM bulk heterojunction solar cell. Based onthe model of interface recombination, two analytical formulas describing the relative ratio of the interface (γI ) to the Langevin (γL) recombination coefficients have been derived. Our analysis indicates that the sign of parameters φT and φF determines...
-
Role of surface recombination in perovskite solar cells at the interface of HTL/CH3NH3PbI3
PublicationIn order to achieve the highest performance of organometal trihalide perovskite solar cells, it is required to recognize the dominant mechanisms which play a key role in a perovskite material. In the following studies, we have focused on the interfacial recombination between the hole transporting layer (HTL) and the perovskite CH3NH3PbI3 in solar cell devices with p–i–n architecture. It has been shown that Cu:NiOx : used as HTL...