The new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....

Real-world antenna design typically relies on empirical methods, where the development starts with structure synthesis followed by its iterative adjustments to achieve the desired performance. Although the outlined approach proved to be successful, it is also dependent on engineering experience. Alternatively, development can be performed automatically based on the specifications. In this work, an unsupervised design of topologically...

W oparciu o zestaw macierzy opisujący ogólną topologię filtrów typu Gm-C opracowano procedurę efektywnej generacji struktur filtrów dolnoprzepustowych. Dla filtrów tego typu podano wyrażenia pozwalające analizować właściwości wrażliwościowe oraz określono zestaw odpowiednich kryteriów porównawczych. Szczegółowe badania porównawcze przeprowadzono dla wybranych filtrów 3-go rzędu w tym realizowanych w strukturach LF(leapfrog) i...

The problem of canceling strong clutter echos in a MIMO noise radar is considered. Execution times of three algorithms is compared. The first solution is a standard Least Squares approach employing Cholesky decomposition of the transmitted signal sample autocorrelation matrix. The second approach is based on careful waveform design which guarantees that the signal sample autocorrelation matrix has Toeplitz structure. This enables...