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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
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Author (1)
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G Cywiński
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- Category:
- Magazine publication
- Type:
- Magazine publication
- Published in:
-
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
no. 34,
edition 2,
ISSN: 0268-1242 - ISSN:
- 0268-1242
- Publication year:
- 2019
- DOI:
- Digital Object Identifier (open in new tab) 10.1088/1361-6641/aaf4a7
- Verified by:
- No verification
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