AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell - Publication - Bridge of Knowledge

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AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Abstract

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Authors (12)

  • Photo of Wojciech Dawidowski

    Wojciech Dawidowski

  • Photo of Beata Šciana

    Beata Šciana

  • Photo of Iwona Zborowska-Lindert

    Iwona Zborowska-Lindert

  • Photo of Miroslav Mikolášek

    Miroslav Mikolášek

  • Photo of Magdalena Latkowska

    Magdalena Latkowska

  • Photo of Damian Radziewicz

    Damian Radziewicz

  • Photo of Damian Pucicki

    Damian Pucicki

  • Photo of Katarzyna Bielak

    Katarzyna Bielak

  • Photo of Mikołaj Badura

    Mikołaj Badura

  • Photo of Jaroslav Kováč

    Jaroslav Kováč

  • Photo of Marek Tłaczała

    Marek Tłaczała

  • Photo of Ryszard S. Romaniuk

    Ryszard S. Romaniuk

Cite as

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Details

Category:
Magazine publication
Type:
Magazine publication
Published in:
International Journal of Electronics and Telecommunications no. 60, edition 2, pages 151 - 156,
ISSN: 2300-1933
ISSN:
2300-1933
Publication year:
2014
DOI:
Digital Object Identifier (open in new tab) 10.2478/eletel-2014-0018
Verified by:
No verification

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