Concentration‐Induced Hetero‐Valent Partial‐Inverse Occupation of Infrared Phosphor - Publication - Bridge of Knowledge

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Concentration‐Induced Hetero‐Valent Partial‐Inverse Occupation of Infrared Phosphor

Abstract

Infrared luminescent materials have evoked much attention from chemists and material scientists. Although substantial progress is made in materials design, the luminescent mechanism remains ambiguous in the complex structures, presenting major barriers to developing novel infrared luminescent materials. Herein, this study aims to deliberate a complete discussion on infrared phosphors with concentration-induced hetero-valent partial-inverse occupation. High-resolution synchrotron X-ray diffraction and Raman spectroscopy reveal the subtle structural change in LiGa5(1−x)O8:5xCr3+. Besides, Cr K-edge wavelet analysis and extended X-ray absorption fine structure illustrate the impact of Cr in the second shell of another Cr ion and the practical coordination of Ga and Cr ions. Furthermore, unexpected two-center Cr3+ emissions and the Cr–Cr pair emission are observed at high Cr concentrations. Variation between the zero-phonon line and N-line at different temperatures is demonstrated. Finally, the structural and luminescent properties are comprehensively discussed, providing the origin of the unexpected Cr2 emission. This study not only provides insight into the hetero-valent partial-inverse occupation process in inorganic materials but also sheds light on developing novel infrared luminescent materials.

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Authors (8)

  • Photo of  Jia‐Yu Hsu

    Jia‐Yu Hsu

    • Research Center for Applied Sciences, Academia Sinica, Taipei, 10608 Taiwan
  • Photo of  Ren-jei Chung

    Ren-jei Chung

    • Institute of Manufacturing Technology, Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 10608 Taiwan
  • Photo of  Yen‐Ling Kuo

    Yen‐Ling Kuo

    • Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608 Taiwan
  • Photo of  Chun Che Lin

    Chun Che Lin

    • Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, 10608 Taiwan
  • Photo of  Natalia Majewska

    Natalia Majewska

    • Institute of Experimental Physics, Faculty of Mathematics, Physics and Informatics, University of Gdańsk
  • Photo of  Sebastian Mahlik

    Sebastian Mahlik

    • Institute of Experimental Physics, Faculty of Mathematics, Physics and Informatics, University of Gdańsk
  • Photo of  Mu-huai Fang

    Mu-huai Fang

    • Research Center for Applied Sciences, Academia Sinica, Taipei, 10608 Taiwan

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Details

Category:
Articles
Type:
artykuły w czasopismach
Published in:
Advanced Optical Materials no. 11, pages 1 - 9,
ISSN: 2195-1071
Language:
English
Publication year:
2023
Bibliographic description:
Kreft D., Hsu J., Chung R., Kuo Y., Lin C. C., Majewska N., Mahlik S., Fang M.: Concentration‐Induced Hetero‐Valent Partial‐Inverse Occupation of Infrared Phosphor// Advanced Optical Materials -Vol. 11,iss. 14 (2023), s.1-9
DOI:
Digital Object Identifier (open in new tab) 10.1002/adom.202300121
Sources of funding:
  • COST_FREE
Verified by:
Gdańsk University of Technology

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