Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics - Publication - Bridge of Knowledge

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

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Lukasz Janicki

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Category:: Magazine publication
Type:: Magazine publication
Published in:: Micromachines no. 12, edition 6,
ISSN: 2072-666X
ISSN:: 2072-666X
Publication year:: 2021
DOI:: Digital Object Identifier (open in new tab) 10.3390/mi12060721
Verified by:: No verification

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