Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics - Publication - Bridge of Knowledge

Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics

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G. Cywinski

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Publication year:: 2022
DOI:: Digital Object Identifier (open in new tab) 10.1109/irmmw-thz50927.2022.9895991
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