Abstract

Diamond is a promising material for 21st century electronics due to its high thermal and electronic conductivity, biocompatibility, chemical stability, high wear resistance, and possibility of doping. However, the semiconductor properties of diamond, especially free-standing films, have not been fully explored. Nor have their integration with polymers and fragile materials and their applications as electronic components. In this thesis, the objective was the fabrication of heterostructures containing diamond films on flexible surfaces for application in electronic devices using the change of electrical parameters under the influence of external factors. To overcome this scientific challenge, boron-doped diamonds were grown using chemical vapour deposition on tantalum. After their delamination, the resulting free-standing films were investigated and analysed using Raman spectroscopy, Scanning and Atomic Force Microscopy, Nanoindentation Tests, Electrochemical measurements, and Electrical Evaluation as a function of temperature. Next, the diamond films were utilised for fabricating six heterostructures. Based on the conducted research, these heterostructures can be used as durable, transparent electrodes, strain sensors, Schottky or Ohmic junctions, capacitors, trinitrotoluene sensors, and as a protective layer for transistors.

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