Visible light activity of pulsed layer deposited BiVO4/MnO2 films decorated with gold nanoparticles: The evidence for hydroxyl radicals formation
Abstract
Thin films containing BiVO4 and MnO2 deposited on FTO and modified by Au nanoparticles were studied towards their photoelectrochemical and photocatalytical activities in an aqueous electrolyte. Electrodes were prepared by the pulsed laser deposition (PLD) method. The surfactant-free ablation process was used for preparation of the gold nanoparticles (GNP) water suspension. Obtained layers of varied thicknesses (27–115 nm) were characterized using Raman spectroscopy, UV–vis spectroscopy and scanning electron microscopy. Electrochemical methods such as electrochemical impedance spectroscopy, linear voltammetry and chronoamperometry under visible light illumination and in the dark were applied to characterize layers as photoanodes. Simple modification of the BiVO4 + MnO2 layer by drop-casting of small amount of colloidal gold (1.5 × 10−14 mol of GNP on 1 cm2) leads to enhancement of the generated photocurrent recorded at E = 0.5 V vs. Ag/AgCl (0.1 M KCl) from 63 μA/cm2 to 280 μA/cm2. Photocatalytical studies were also exploited towards decomposition of methylene blue (MB). A possible mechanism of MB photodegradation was proposed. The formation of hydroxyl radicals was detected by photoluminescence spectra using terephthalic acid as the probe molecule.
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- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
APPLIED SURFACE SCIENCE
no. 385,
pages 199 - 208,
ISSN: 0169-4332 - Language:
- English
- Publication year:
- 2016
- Bibliographic description:
- Trzciński K., Szkoda M., Sawczak M., Karczewski J., Lisowska-Oleksiak A.: Visible light activity of pulsed layer deposited BiVO4/MnO2 films decorated with gold nanoparticles: The evidence for hydroxyl radicals formation// APPLIED SURFACE SCIENCE. -Vol. 385, (2016), s.199-208
- DOI:
- Digital Object Identifier (open in new tab) 10.1016/j.apsusc.2016.05.115
- Verified by:
- Gdańsk University of Technology
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