Search results for: MOSFET MODELING

• JOURNAL OF MOLECULAR MODELING

  Journals

  ISSN: 1610-2940 , eISSN: 0948-5023

• Journal of Chemical Information and Modeling

  Journals

  ISSN: 1549-9596 , eISSN: 1549-960X

• APPLIED MATHEMATICAL MODELLING

  Journals

  ISSN: 0307-904X , eISSN: 1872-8480

• Dependence Modeling

  Journals

  ISSN: 2300-2298

• Multidiscipline Modeling in Materials and Structures

  Journals

  ISSN: 1573-6105 , eISSN: 1573-6113

• Selection of the most adequate trip-modelling tool for integrated transport planning system

  Publication

  • P. Sawicki
  • M. Kiciński
  • S. Fierek

  - Archives of Transport - Year 2016

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• A quasi-2D small-signal MOSFET model - main results

  Publication

  • W. Kordalski

  - Elektronika : konstrukcje, technologie, zastosowania - Year 2014

  Dynamic properties of the MOS transistor under small-signal excitation are determined by kinetic parameters of the carriers injected into the channel, i.e., the low-field mobility, velocity saturation, mobility at the quiescent-point (Q-point), longitudinal electric field in the channel, by dynamic properties of the channel, as well as by an electrical coupling between the perturbed carrier concentration in the channel and the...

• A Quasi-2D MOSFET Model — 2D-to-Quasi-2D Transformation

  Publication

  • W. Kordalski

  - Elektronika : konstrukcje, technologie, zastosowania - Year 2013

  A quasi-two-dimensional (quasi-2D) representation of the MOSFET channel is proposed in this work. The representation lays the foundations for a quasi 2D MOSFET model. The quasi 2D model is a result of a 2D into quasi 2D transformation. The basis for the transformation are an analysis of a current density vector field and such phenomena as Gradual Channel Detachment Effect (GCDE), Channel Thickness Modulation Effect (CTME), and...

  Full text to download in external service

• A quasi-2D small-signal MOSFET model - main results

  Publication

  • W. Kordalski

  - Year 2014

  Main results stemming from a new quasi 2D non-quasi-static small-signal four-terminal model of the MOSFET are presented in this work. The model is experimentally verified up to 30 GHz.

• Modeling pragmatics for visual modeling language evaluation

  Publication

  • A. Bobkowska

  - Year 2005

  Podczas oceny użyteczności języków modelowania wizualnego istnieje potrzeba uwzględnienia ich pragmatyki. Języki modelowania wizualnego mogą być stosowane w różnym kontekście, co powoduje różnice w wymaganiach, które są im stawiane. Jawny opis kontekstu użycia ułatwia precyzyjną ocenę. Pragmatyka składa się ze zbioru profili, które opisują konkretne konteksty użycia. W referacie podjęto próbę zastosowania modeli zadań do opisu...