Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response

Grzegorz Blakiewicz

doi:10.3390/en16124825

Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response

Abstrakt

In this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance, with supply voltages below 1 V, compared to commonly used regulators with p-channel MOS transistors. In the presented design of ALDO regulator in 180 nm CMOS X-FAB technology, an output voltage of 0.7 V was achieved with an output current of 10 mA and a supply voltage of 0.8 V. Simulation results show that despite the low supply voltage, output voltage spikes do not exceed 70 mV at the worst technology corner when output current transients from 100 uA to 10 mA. Under such conditions, stable operation and power supply rejection PSR = 35 dB were achieved with an output capacitance of 0–500 pF. The proposed regulator allows to push the limit of ALDO regulator applications to voltages below 1 V with only slight degradation of its performance.

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Autor (1)

Grzegorz Blakiewicz dr hab. inż.

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pobrano 93 razy

Wersja publikacji: Accepted albo Published Version
DOI:: Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.3390/en16124825
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Kategoria:

Publikacja w czasopiśmie

Typ:

artykuły w czasopismach

Opublikowano w:

ENERGIES nr 16,
ISSN: 1996-1073

Język:

angielski

Rok wydania:

2023

Opis bibliograficzny:

Blakiewicz G.: Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response// ENERGIES -Vol. 16,iss. 12 (2023), s.4825-

DOI: