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Description
8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of elements film was etched by Ar ion gun 5 times. Each etching takes 30 sec. XPS measurements were carried out at room temperature under ultrahigh vacuum conditions and pressures below 1.1 x 10-6 Pa using Omicron NanoScience equipment. Data analysis was performed with the CASA XPS software package using Shirley background subtraction and Gauss-Lorentz curve fitting algorithm by the least-squares method - GL (30). The resulting spectra were calibrated to obtain a binding energy of 285.00 eV for C 1s.
Dataset file
hexmd5(md5(part1)+md5(part2)+...)-{parts_count} where a single part of the file is 512 MB in size.Example script for calculation:
https://github.com/antespi/s3md5
File details
- License:
-
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CC BYAttribution - Raw data:
- Data contained in dataset was not processed.
Details
- Year of publication:
- 2021
- Verification date:
- 2021-07-22
- Creation date:
- 2019
- Dataset language:
- English
- Fields of science:
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- materials engineering (Engineering and Technology)
- DOI:
- DOI ID 10.34808/92k2-wd31 open in new tab
- Verified by:
- Gdańsk University of Technology
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