Search
dr hab. inż. Piotr Płotka
Employment
- Prodziekan ds. nauki i wdrożeń at Faculty of Electronics, Telecommunications and Informatics
- Associate professor at Department of Microelectronic Systems
Publications
Filters
total: 8
Catalog Publications
Year 2022
-
Design specification management with automated decision-making for reliable optimization of miniaturized microwave components
PublicationThe employment of numerical optimization techniques for parameter tuning of microwave components has nowadays become a commonplace. In pursuit of reliability, it is most often carried out at the level of full-wave electromagnetic (EM) simulation models, incurring considerable computational expenses. In the case of miniaturized microstrip circuits, densely arranged layouts with strong cross-coupling effects make EM-driven tuning...
-
On Improved-Reliability Design Optimization of High-Frequency Structures Using Local Search Algorithms
PublicationThe role of numerical optimization has been continuously growing in the design of high-frequency structures, including microwave and antenna components. At the same time, accurate evaluation of electrical characteristics necessitates full-wave electromagnetic (EM) analysis, which is CPU intensive, especially for complex systems. As rigorous optimization routines involve repetitive EM simulations, the associated cost may be significant....
Year 2021
-
EM-Driven Multi-Objective Optimization of a Generic Monopole Antenna by Means of a Nested Trust-Region Algorithm
PublicationAntenna structures for modern applications are characterized by complex and unintuitive topologies that are difficult to develop when conventional experience-driven techniques are of use. In this work, a method for automatic generation of antenna geometries in a multi-objective setup has been proposed. The approach involves optimization of a generic spline-based radiator with adjustable number of parameters using a nested trust-region-based...
-
Reduced-Cost Microwave Design Closure by Multi-Resolution EM Simulations and Knowledge-Based Model Management
PublicationParameter adjustment through numerical optimization has become a commonplace of contemporary microwave engineering. Although circuit theory methods are ubiquitous in the development of microwave components, the initial designs obtained with such tools have to be further tuned to improve the system performance. This is particularly pertinent to miniaturized structures, where the cross-coupling effects cannot be adequately accounted...
Year 2016
-
Electrical characterization of diamond/boron doped diamond nanostructures for use in harsh environment applications
PublicationThe polycrystalline boron doped diamond (BDD) shows stable electrical properties and high tolerance for harsh environments (e.g. high temperature or aggressive chemical compounds) comparing to other materials used in semiconductor devices. In this study authors have designed electronic devices fabricated from non-intentionally (NiD) films and highly boron doped diamond structures. Presented semiconductor devices consist of highly...
Year 2015
-
Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes
PublicationThe optical properties of ultrathin (less than 100 nm) boron-doped nanocrystalline diamond (B-NCD) film were investigated in a wavelength range of 200 ÷ 20000 nm. The B-NCD refractive index showed values close to that of monocrystalline diamond (n = 2.45) in a broad wavelength range (450 ÷ 4000 nm). A transmittance up to 70% and the average film thickness of 70 nm were achieved. A special cone-shaped shim was used in the deposition...
-
Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio
PublicationThe influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation....
Year 2008
-
GaAs ballistic and tunneling nanodevices for terahertz electronics and medical applications
PublicationPrzy użyciu selektywnej epitaksji warstw molekularnych (MLE) wytworzono w GaAs balistyczne i tunelowe tranzystory o indukcji elektrostatycznej (SIT), z kanałami w skali 10 nm. Szacowany czas przelotu elektronów jest krótszy od 2×10-14 s. Metoda MLE została również wykorzystana do wykonania diod generacyjnych TUNNETT działających w oparciu o czas przelotu i tunelowe wstrzykiwanie elektronów. Z użyciem diod TUNNETT wygenerowano częstotliwość...
seen 3275 times