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Abstract
A dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared control strategies. Zero voltage switching achieved for the TCM operation improves efficiency with reference to the DCM operation. However, significant attenuation of electromagnetic interference (EMI) spectra is obtained for TCM operation with capacitive snubber. Sizing of capacitor snubber dependent on parasitic inductances of commutation circuit and rapid switching of GaN HEMTs are illustrated.
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Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1109/JESTPE.2020.2987638
- License
- Copyright (2020 IEEE)
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- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
-
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
no. 9,
pages 4146 - 4152,
ISSN: 2168-6777 - Language:
- English
- Publication year:
- 2021
- Bibliographic description:
- Derkacz P. B., Musznicki P., Chrzan P.: EMI attenuation in a DC-DC buck converter using GaN HEMT// IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS -Vol. 9,iss. 4 (2021), s.4146-4152
- DOI:
- Digital Object Identifier (open in new tab) 10.1109/jestpe.2020.2987638
- Verified by:
- Gdańsk University of Technology
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