Keywords

Details

Category:

Articles

Type:

artykuły w czasopismach

Published in:

Przegląd Elektrotechniczny edition 2, pages 125 - 128,
ISSN: 0033-2097

Language:

English

Publication year:

2019

Bibliographic description:

Derkacz P., Musznicki P.: Gate Driver with Overcurrent Protection Circuit for GaN Transistors// Przegląd Elektrotechniczny -,iss. 2 (2019), s.125-128

DOI:

Digital Object Identifier (open in new tab) 10.15199/48.2019.02.28

Bibliography: test

1. H. A. Mantooth, M. D. Glover, and P. Shepherd, "Wide bandgap technologies and their implications on miniaturizing power electronic systems," IEEE Journal of emerging and se- lected topics in Power Electronics, vol. 2, no. 3, pp. 374-385, 2014. open in new tab
2. M. Landel, C. Gautier, D. Labrousse, S. Levebvre, F. Zaki, and Z. Khatir, "Dispersion of electrical characteristics and short-circuit robustness of 600 v emode gan transistors," in PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. VDE, 2017, pp. 1-9. open in new tab
3. H. Li, X. Li, X. Wang, J. Wang, Y. Alsmadi, L. Liu, and S. Bala, "E-mode gan hemt short circuit robustness and degradation," in Energy Conversion Congress and Exposition (ECCE), 2017 open in new tab
4. IEEE. IEEE, 2017, pp. 1995-2002. open in new tab
5. D. Pappis, K. Goebel, and P. Zacharias, "Short circuit capa- bility of 650 v normally off gan e-hemt and mosfet-hemt cas- code," in PCIM Europe 2017; International Exhibition and Con- ference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. VDE, 2017, pp. 1-8.
6. D. Bortis, O. Knecht, D. Neumayr, and J. W. Kolar, "Com- prehensive evaluation of GaN git in low-and high-frequency bridge leg applications," in Proc. IEEE 8th Int. Power Electron- ics and Motion Control Conf. (IPEMC-ECCE Asia), May 2016, pp. 21-30. open in new tab
7. B. Wittig, M. Boettcher, and F. W. Fuchs, "Analysis and de- sign aspects of a desaturation detection circuit for low voltage power mosfets," in Power Electronics and Motion Control Con- ference (EPE/PEMC), 2010 14th International. IEEE, 2010, pp. T1-7. open in new tab
8. A. E. Awwad and S. Dieckerhoff, "Short-circuit evaluation and overcurrent protection for sic power mosfets," in Power Elec- tronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on. IEEE, 2015, pp. 1-9. open in new tab
9. Z. Wang, X. Shi, Y. Xue, L. M. Tolbert, F. Wang, and B. J. Blalock, "Design and performance evaluation of overcurrent protection schemes for silicon carbide (sic) power mosfets," IEEE Transactions on Industrial Electronics, vol. 61, no. 10, pp. 5570-5581, 2014. open in new tab
10. B. Huang, Y. Li, T. Q. Zheng, and Y. Zhang, "Design of over- current protection circuit for gan hemt," in Energy Conversion Congress and Exposition (ECCE), 2014 IEEE. IEEE, 2014, pp. 2844-2848. open in new tab

show (10) hide

Verified by:

Gdańsk University of Technology