We present results of the probability distribution analysis of flicker noise generated in Au nanoparticle (AuNP) decorated graphene–Si Schottky barrier diodes with and without yellow light illumination (592 nm), close to the localized surface plasmon resonance in the AuNPs (586 nm). The AuNPs occupy imperfections in the single-layer graphene and reduce the flicker noise intensity generated in the graphene layer. The estimated probability...

We report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)4O; THF] and chloroform (CHCl3), as also during yellow light illumination (592nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle...

One of the method of electronic device quality and reliability evaluation is observation of its inherent noise. The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are...

The effect of ultraviolet (UV) or blue irradiation on graphene/n-doped silicon Schottky junctions toward gas sensing was investigated. Schottky diodes were subjected to oxidizing nitrogen dioxide (NO2, 1–3 ppm) and reducing tetrahydrofuran (THF, 50–200 ppm), showing significantly different responses observed on the currentvoltage (I-V) characteristics, especially under UV light (275 nm). NO2 affected the resistive part of the forward region...