Acute leukemia (AL) with a lineage switch (LS) is associated with poor prognosis. The predisposing factors of LS are unknown, apart from KMT2A rearrangements that have been reported to be associated with LS. Herein, we present two cases and review all 104 published cases to identify risk factors for LS. Most of the patients (75.5%) experienced a switch from the lymphoid phenotype to the myeloid phenotype. Eighteen patients (17.0%)...

SDN is the approach in telecommunication networks that separates control plane from data forwarding plane by specifying a single network entity as a controller that defines rules (called flows) of traffic forwarding for the switches connected to it. The time that is required for installation of these rules might be a hindrance for the overall performance of SDN network. In the paper, a model for testing and evaluating the influence...

Due to their high density-specific stiffnesses and strength, fibre reinforced plastic (FRP) composites are particularly interesting for mobility and transport applications. Warp-knitted non-crimp fabrics (NCF) are one possible way to produce such FRP composites. They are advantageous because of their low production costs and the ability to tailor the properties of the textile to the reinforcement and drape requirements of the application....

W publikacji zaprezentowano sposób modelowania i wyznaczania emisji przewodzonej zaburzeń elektromagnetycznych w przekształtnikach energoelektronicznych. Na przykładzie przekształtnika DC-DC, zostały dobrane odpowiednie narzędzia CAD do szerokopasmowego modelowania i symulacji przekształtnika energoelektronicznego. Otrzymane rezultaty zostały eksperymentalnie potwierdzone i porównane zarówno w dziedzinie czasu jak i częstotliwości...

GaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...