Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing

Description

This data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced when utilizing UV irradiation (275 nm) compared to dark conditions.

Dataset file

Graphene_AlGaN_GaN.zip

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CC BY

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Details

Year of publication:

2024

Verification date:

2024-03-01

Dataset language:

English

Fields of science:

automation, electronics, electrical engineering and space technologies (Engineering and Technology)

DOI:

10.34808/6019-g686

Funding:

System of gas detection by two-dimensional materials

Verified by:

Gdańsk University of Technology

Keywords

References

publication The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation

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