Details
- Project's acronym:
- 2DMs
- Financial Program Name:
- OPUS
- Organization:
- Narodowe Centrum Nauki (NCN) (National Science Centre)
- Agreement:
- UMO-2019/35/B/ST7/02370 z dnia 2020-10-01
- Realisation period:
- 2020-10-02 - 2024-09-30
- Project manager:
- prof. dr hab. inż. Janusz Smulko
- Realised in:
- Department of Metrology and Optoelectronics
- External institutions
participating in project: -
- Instytut Wysokich Ciśnień Polskiej Akademii Nauk (Poland)
- Project's value:
- 928 680.00 PLN
- Request type:
- National Research Programmes
- Domestic:
- Domestic project
- Verified by:
- Gdańsk University of Technology
Papers associated with that project
Filters
total: 10
Catalog Projects
Year 2024
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Fluctuation-Enhanced Sensing of Organic Vapors by Ink-Printed MoS2 Devices under UV Irradiation
PublicationThis work presents the results of fluctuationenhanced sensing (FES) of selected organic gases by MoS2 sensor fabricated via a simple ink printing method. We demonstrate that low-frequency noise measured under UV irradiation (275 nm) is more sensitive to different gases than measured in the dark. The noise at 1 Hz under UV light increased 3.3, 3.5, 1.6, and 2.9 times for chloroform, tetrahydrofuran, acetonitrile, and acetone ambiances, respectively....
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Perspectives of Fluctuation-Enhanced Gas Sensing by Two-Dimensional Materials
PublicationWe present the results of gas sensing using the fluctuation-enhanced sensing method in selected two-dimensional materials (2DMs). We claim that gas sensing selectivity can be improved further by considering semiconducting two-dimensional materials doped by noble metal nanoparticles. The 2DMs' structures exhibit some imperfections defined by their structure, occurring repeatedly there. These imperfections are adsorption-desorption...
Year 2023
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Enhanced gas sensing by graphene-silicon Schottky diodes under UV irradiation
PublicationThe effect of ultraviolet (UV) or blue irradiation on graphene/n-doped silicon Schottky junctions toward gas sensing was investigated. Schottky diodes were subjected to oxidizing nitrogen dioxide (NO2, 1–3 ppm) and reducing tetrahydrofuran (THF, 50–200 ppm), showing significantly different responses observed on the currentvoltage (I-V) characteristics, especially under UV light (275 nm). NO2 affected the resistive part of the forward region...
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Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases
PublicationWe report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)4O; THF] and chloroform (CHCl3), as also during yellow light illumination (592nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle...
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
PublicationWe report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...
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Optimum Choice of Randomly Oriented Carbon Nanotube Networks for UV-Assisted Gas Sensing Applications
PublicationWe investigated the noise and photoresponse characteristics of various optical transparencies of nanotube networks to identify an optimal randomly oriented network of carbon nanotube (CNT)-based devices for UV-assisted gas sensing applications. Our investigation reveals that all of the studied devices demonstrate negative photoconductivity upon exposure to UV light. Our studies confirm the effect of UV irradiation on the electrical...
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
Year 2022
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Combined chemoresistive and in situ FTIR spectroscopy study of nanoporous NiO films for light-activated nitrogen dioxide and acetone gas sensing
PublicationThe chemoresistive sensor response of nanoporous NiO films prepared by advanced gas deposition was investigated by combined resistivity and in situ FTIR spectroscopy, with and without simultaneous light illumination, to detect NO2 and acetone gases. The sensitivity towards NO2 increased dramatically under UV irradiation employing 275 nm light. Improved sensitivity was observed at an elevated temperature of 150 °C. In situ FTIR...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
Year 2021
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Pulsed UV-irradiated Graphene Sensors for Ethanol Detection at Room Temperature
PublicationA graphene-based gas sensor fabricated in a FET (GFET) configuration and its sensitivity towards ethanol and methane is reported. Detection of ethanol at the level of 100 ppm was observed under pulsed UV irradiation and after cleaning by UV light in the N2 ambient. Reduction of the frequency of UV irradiation pulses resulted in increased changes in sensor resistance in the presence of ethanol. Improved sensing behavior was ascribed...
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