Search
Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
Abstract
The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.
Citations
-
1 4
CrossRef
-
0
Web of Science
-
1 3
Scopus
Authors (13)
-
Adil Rehman
-
Pavlo Sai
-
Bartłomiej Stonio
-
Aleksandra Krajewska
-
Maksym Dub
-
Jacek Kacperski
-
Grzegorz Cywiński
-
Maciej Haras
-
Sergey Rumyantsev
-
Lars Österlund
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1021/acssensors.2c01511
- License
-
open in new tab
Keywords
Details
- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
-
ACS Sensors
no. 7,
pages 3094 - 3101,
ISSN: 2379-3694 - Language:
- English
- Publication year:
- 2022
- Bibliographic description:
- Drozdowska K., Rehman A., Sai P., Stonio B., Krajewska A., Dub M., Kacperski J., Cywiński G., Haras M., Rumyantsev S., Österlund L., Smulko J., Kwiatkowski A.: Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation// ACS Sensors -Vol. 7,iss. 10 (2022), s.3094-3101
- DOI:
- Digital Object Identifier (open in new tab) 10.1021/acssensors.2c01511
- Sources of funding:
- Verified by:
- Gdańsk University of Technology
seen 134 times
Recommended for you
The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
- K. Drozdowska,
- S. Rumyantsev,
- J. Smulko
- + 5 authors
Pulsed UV-irradiated Graphene Sensors for Ethanol Detection at Room Temperature
- K. Drozdowska,
- A. Rehman,
- P. Sai
- + 7 authors
Fluctuation-Enhanced Sensing of Organic Vapors by Ink-Printed MoS2 Devices under UV Irradiation
- K. Drozdowska,
- J. Smulko,
- S. Rumyantsev
- + 1 authors
Enhanced gas sensing by graphene-silicon Schottky diodes under UV irradiation
- K. Drozdowska,
- A. Rehman,
- J. Smulko
- + 7 authors