Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Adil Rehman; Grzegorz Cywiński; W. Knap; Janusz Smulko; Alexander Balandin; Sergey Rumyantsev

doi:10.1063/5.0143641

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Abstract

We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons had spectral density SI ~ 1/f^c (f is the frequency) with c ~ 1.3–1.4 within the whole range of the drain and gate bias voltages. We used light illumination to establish that the noise is due to generation–recombination, owing to the presence of deep levels, and determined the energies of the defects that act as the carrier trapping centers in ZrS3 nanoribbons.

Citations

2

CrossRef
0

Web of Science
2

Scopus

Authors (6)

Adil Rehman
- 0000-0002-4330-5846
Grzegorz Cywiński
W. Knap
Janusz Smulko prof. dr hab. inż.
Alexander Balandin
- 0000-0002-9944-7894
Sergey Rumyantsev

Cite as

Full text

download paper

downloaded 0 times

Publication version: Accepted or Published Version
DOI:: Digital Object Identifier (open in new tab) 10.1063/5.0143641
License: Copyright (2023 AIP Publishing)

full content of the article see on external site open in new tab

Keywords

Details

Category:

Articles

Type:

artykuły w czasopismach

Published in:

APPLIED PHYSICS LETTERS no. 122,
ISSN: 0003-6951

Language:

English

Publication year:

2023

Bibliographic description:

Rehman A., Cywiński G., Knap W., Smulko J., Balandin A., Rumyantsev S.: Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons// APPLIED PHYSICS LETTERS -Vol. 122,iss. 9 (2023), s.090602-

DOI: