Search
Abstract
A novel semiconductor device, viz., Horizontally-Split-Drain Current-Controlled Field-Effect Transistor (HSDCCFET) with two control electrodes is proposed in this works. For the sake of brevity, the device can be called a CCFET. Operating principle of the proposed transistor is based on one of the galvanomagnetic phenomena, the Biot-Savart-Laplace law and a Gradual Channel Detachment Effect (GCDE). The transistor is dedicated to low-power and low-voltage integrated circuit applications and besides it can be used to measure or detect steady or variable magnetic fields. As an element of analog integrated circuits, it can be applied to realize, e.g., a potential free current amplifier, an operational potential free current amplifier (scaling, summation, subtracting, differentiating, and integrating), and a voltage current multiplier.
Cite as
Full text
full text is not available in portal
Keywords
Details
- Category:
- Articles
- Type:
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Published in:
-
Zeszyty Naukowe Wydziału ETI Politechniki Gdańskiej. Technologie Informacyjne
no. T. 14,
pages 635 - 647,
ISSN: 1732-1166 - Language:
- English
- Publication year:
- 2007
- Bibliographic description:
- Kordalski W.: A current-controlled FET// Zeszyty Naukowe Wydziału ETI Politechniki Gdańskiej. Technologie Informacyjne. -Vol. T. 14., (2007), s.635-647
- Verified by:
- Gdańsk University of Technology
seen 90 times