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Abstract
Few-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff can be engineered with changing the thickness of the boron-doped layer grown in a process of microwave plasma enhanced chemical vapor deposition (MPECVD) at the top of the diamond layer.
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- Category:
- Conference activity
- Type:
- publikacja w wydawnictwie zbiorowym recenzowanym (także w materiałach konferencyjnych)
- Title of issue:
- MATERIAŁY KONFERENCYJNE ICT YOUNG 2013 strony 26 - 34
- Language:
- English
- Publication year:
- 2013
- Bibliographic description:
- Zwolski K.: Al-DIAMOND SCHOTTKY TUNNEL DIODES WITH BARRIER HEIGHT CONTROL// MATERIAŁY KONFERENCYJNE ICT YOUNG 2013/ ed. Piotr Skorowski, Mateusz Zabolski Gdańsk: , 2013, s.26-34
- Verified by:
- Gdańsk University of Technology
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