Electron mobility variance in semiconductors: the variance approach

Slavik Melkonyan; Hayk Asriyan; Armenuhi Surmalyan; Janusz Smulko

Electron mobility variance in semiconductors: the variance approach

Abstract

Praca przedstawia nowe podejście da analizy zjawisk losowych w półprzewodnikach. Uwzględnia kilka mechanizmów zjawisk fluktuacji ruchliwości w półprzewodnikach, prowadzących do powstawamai składowej szumów typu 1/f, dominujących w zakresie małych czetotliwości. Przedstawia analizę sposobu wyznaczenia stałej Hooge'a określającej intensywność szumów typu 1/f.The statistical non-triviality of current carrier mobility fluctuations in non-degenerate semiconductors is studied in the frames of the newly developed variance approach theory. Expressions for electron mobility variances conditioned by the fluctuations of conduction band energy level occupancy and electron quasi-momentum relaxation time are obtained and analysed. It is established that the fluctuations of the quasi-momentum relaxation time cannot be a "self-reliant" source of current 1/f-noise. A new and more general expression for Hooge's coefficient is proposed. The newly proposed approach makes possible to investigate properties of spectral density of noises in a novel way incorporating potential mechanisms of fluctuations origin in semiconductors.

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Category:: Articles
Type:: artykuły w czasopismach
Published in:: Armenian Journal of Physics no. 4, pages 62 - 73,
ISSN: 1829-1171
Language:: English
Publication year:: 2011
Bibliographic description:: Melkonyan S., Asriyan H., Surmalyan A., Smulko J.: Electron mobility variance in semiconductors: the variance approach// Armenian Journal of Physics -Vol. 4,iss. 1 (2011), s.62-73
Verified by:: Gdańsk University of Technology