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Abstract
The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions.
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Authors (2)
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Pawel B. Derkacz
- Arex (WB Group), ul.Hutnicza 3, 80-212 Gdynia
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- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
-
ENERGIES
no. 18,
ISSN: 1996-1073 - Language:
- English
- Publication year:
- 2025
- Bibliographic description:
- Chrzan P., Derkacz P. B.: GaN Power Transistors in Converter Design Techniques// ENERGIES -,iss. 18/11 (2025),
- DOI:
- Digital Object Identifier (open in new tab) 10.3390/en18112890
- Sources of funding:
-
- Free publication
- Verified by:
- Gdańsk University of Technology
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