Search
Growth and Isolation of Large Area Boron‐Doped Nanocrystalline Diamond Sheets: A Route toward Diamond‐on‐Graphene Heterojunction
Abstract
Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free‐standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor‐like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low‐temperature diamond‐based transistor.
Citations
-
2 6
CrossRef
-
0
Web of Science
-
2 5
Scopus
Authors (10)
-
Adrian Nosek
- University of California Riverside University of California Riverside
-
Andrés Jaramillo-botero dr
- California Institute of Technology Materials and Process Simulation Center
-
William A. Goddard III prof
- California Institute of Technology Materials and Process Simulation Center
-
Marc Bockrath
- University of California Riverside University of California Riverside
-
Tadeusz Ossowski prof. dr hab. inż.
- Uniwersytet Gdański Chemii Analitycznej
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/adfm.201805242
- License
- Copyright (2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords
Details
- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
ADVANCED FUNCTIONAL MATERIALS
no. 29,
edition 3,
pages 1 - 9,
ISSN: 1616-301X - Language:
- English
- Publication year:
- 2019
- Bibliographic description:
- Bogdanowicz R., Ficek M., Sobaszek M., Nosek A., Gołuński Ł., Karczewski J., Jaramillo-Botero A., Goddard Iii W. A., Bockrath M., Ossowski T.: Growth and Isolation of Large Area Boron‐Doped Nanocrystalline Diamond Sheets: A Route toward Diamond‐on‐Graphene Heterojunction// ADVANCED FUNCTIONAL MATERIALS. -Vol. 29, iss. 3 (2019), s.1-9
- DOI:
- Digital Object Identifier (open in new tab) 10.1002/adfm.201805242
- Verified by:
- Gdańsk University of Technology
seen 158 times
Recommended for you
Electrochemical performance of thin free-standing boron-doped diamond nanosheet electrodes
- R. Bogdanowicz,
- M. Ficek,
- N. Malinowska
- + 7 authors
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
- M. Sobaszek,
- M. Gnyba,
- S. Kulesza
- + 3 authors