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Silicon
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PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS
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Silicon Semiconductor
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Positron Annihilation Studies of Silicon Oxides and Oxygen Precipitates in Silicon
PublicationTechniki pozytonowe dają możliwości badania defektów i zmian strukturalnych nie obserwowanych innymi metodami. W tej pracy zastosowano 3 różne techniki pozytonowe do badania zmian strukturalnych i tworzenia wydzieleń SiOx w krzemie.
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Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon
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Silicon carbide application issues
PublicationThe main goals of Task 3 and Task 4 of the ordered project ''New technologies based on silicon carbide and their application in HF, high power and high temperature electronics'' are presented
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Studies of Silicon Podand Solvents
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Chemical treatment of crystalline silicon solar cells as a method of recovering pure silicon from photovoltaic modules
PublicationProducenci modułów PV stosują ogniwa krzemowe, wyprodukowane w różnej technologii, w efekcie czego różnią się one między sobą. Różnorodność dotyczy zarówno modułów PV, wykonanych z ogniw polikrystalicznych jak i monokrystalicznych. Różnice widoczne są zwłaszcza dla kontaktów elektrycznych. Producenci ogniw wykonują metalizację z zastosowaniem past Al, Ag lub przy jednoczesnym użyciu Al/Ag. Proces recyklingu krzemowych ogniw PV...
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Ultrasonic spectroscopy of silicon single crystal
PublicationSpecimens of Si single crystals with different crystal orientation [100] and [110] were studied by the electro-ultrasonic spectroscopy (EUS) and Resonant Ultrasonic Spectroscopy (RUS). A silicon single crystal is an anisotropic crystal, so its properties are different in different directions in the material relative to the crystal orientation. EUS is based on interaction of two signals: electric AC signal and ultrasonic signal,...
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Effect of illumination on noise of silicon solar cells
PublicationTransport and noise properties of silicon solar cells in darkness and under illumination have been studied. The measurements were carried out for both reverse and forward bias of the device. The changes in the sample behaviour are due to the variation of PN junction dynamic resistance and, also, the occurence of both 1/f and generation-recombination noise components