Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics - Publikacja - MOST Wiedzy

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Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics

Abstrakt

The investigated ceramics were prepared by a solid-state reaction from simple oxides and carbonates with the use of a mixed oxide method (MOM). The morphology of BaTi0.96Si0.04O3 (BTSi04) ceramics was characterised by means of a scanning electron microscopy (SEM). It was found that Si+4 ion substitution supported the grain growth process in BT-based ceramics. The EDS results confirmed the high purity and expected quantitative composition of the synthesized material. The dielectric properties of the ceramics were also determined within the temperature range (ΔT=130-500K). It was found that the substitution of Si+4 ions had a significant influence on temperature behavior of the real (ε’) and imaginary (ε”) parts of electric permittivity as well as the temperature dependence of a.c. conductivity. Temperature regions of PTCR effect (positive temperature coefficient of resistivity) were determined for BTSi04 ceramics in the vicinity of structural phase transitions typical for barium titanate. No distinct maximum indicating a low-temperature structural transition to a rhombohedral phase in BTSi04 was found. The activation energy of conductivity was determined from the Arrhenius plots. It was found that substitution of Si ions in amount of 4wt.% caused almost 50% decrease in an activation energy value.

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Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuły w czasopismach
Opublikowano w:
ARCHIVES OF METALLURGY AND MATERIALS nr 61, wydanie 2, strony 887 - 890,
ISSN: 1733-3490
Język:
angielski
Rok wydania:
2016
Opis bibliograficzny:
Garbarz-Glos B., Lisińska-Czekaj A., Czekaj D., Bąk W.: Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics// ARCHIVES OF METALLURGY AND MATERIALS -Vol. 61,iss. 2 (2016), s.887-890
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1515/amm-2016-0150
Weryfikacja:
Politechnika Gdańska

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