Piotr Czyż - Publications - Bridge of Knowledge

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Year 2017
Year 2016
  • Performance Comparison of a 650 V GaN SSFET and CoolMOS

    The new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....

Year 2015

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