We present results of the probability distribution analysis of flicker noise generated in Au nanoparticle (AuNP) decorated graphene–Si Schottky barrier diodes with and without yellow light illumination (592 nm), close to the localized surface plasmon resonance in the AuNPs (586 nm). The AuNPs occupy imperfections in the single-layer graphene and reduce the flicker noise intensity generated in the graphene layer. The estimated probability...

Few-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff...

One of the method of electronic device quality and reliability evaluation is observation of its inherent noise. The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are...