Electrical responses of Graphene-Silicon Schottky diodes toward nitrogen dioxide and tetrahydrofuran under irradiation

Description

Graphene-Silicon Schottky junctions were utilized as gas sensors toward inorganic (nitrogen dioxide) and organic (tetrahydrofuran) gas qualitative and quantitative detection. The electrical responses of the sensors were collected in the form of current-voltage characteristics and measurements of current in time domain for a selected voltage bias. The data was recorded for the sensors operating in the dark and under blue (wavelength of 470 nm) or UV (wavelength 275 nm) light. This data set consists of raw and modified data of current responses of the Schottky diodes for selected voltage range, showing that both gases affect the diodes characteristics in a different way (nitrogen dioxide affects only the forward region of the I-V curve, and tetrahydrofuran affects also the reverse region of the characteristic ascribed to changes in the Schottky barrier height).

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Year of publication:

2024

Verification date:

2024-03-05

Dataset language:

English

Fields of science:

automation, electronics, electrical engineering and space technologies (Engineering and Technology)

DOI:

10.34808/2q4d-pf14

Funding:

System of gas detection by two-dimensional materials

Verified by:

Gdańsk University of Technology

Keywords

References

publication Enhanced gas sensing by graphene-silicon Schottky diodes under UV irradiation

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