Search
Abstract
The boron-doped diamond thin films were growth in deuterium rich microwave plasma in CVD process. The mechanism of influence of plasma composition on boron doping level was studied using optical emission spectroscopy. Deuterium rich plasma results in an increased dissociation of B2H6 precursor and intense boron-radicals' production. In consequence, a higher doping level of diamond films was observed by means of Laser Induced Breakdown Spectroscopy and Raman spectroscopy. Deuterium species modify the mechanism of boron incorporation into thin films leading to increased boron concentration. Lower concentrations of sp2 phases and CH defects have been noticed in the films deposited in the plasma with deuterium than with hydrogen. Moreover, all BHx (x = 0–3) species can bind to radical sites on the diamond {100} surface to form stable complexes. The enhanced boron doping is attributed to the lower energy of BH bond at the growth surface, when compared to CH bond. The hydrogen abstraction from BH site is providing dangling bond for diamond growth and boron incorporation. This effect plays a main role due to extended dissociation caused by deuterium rich plasma. The increase in the carrier concentration and the decrease in the Hall mobility for the BDD samples grown in deuterium was registered.
Citations
-
6
CrossRef
-
0
Web of Science
-
7
Scopus
Authors (8)
-
Mirosław Sawczak dr hab. inż.
- Polska Akademia Nauki Instytut Maszyn Przepływowych
-
Galina Grigorian dr
- St. Petersburg State University St. Petersburg State University
-
Piotr Caban dr
- Institute of Electronic Materials Technology Institute of Electronic Materials Technology
-
Adam Cenian
- Polska Akademia Nauki Instytut Maszyn Przepływowych
Cite as
Full text
- Publication version
- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.1016/j.diamond.2019.05.005
- License
-
open in new tab
Keywords
Details
- Category:
- Articles
- Type:
- artykuł w czasopiśmie wyróżnionym w JCR
- Published in:
-
DIAMOND AND RELATED MATERIALS
pages 198 - 206,
ISSN: 0925-9635 - Language:
- English
- Publication year:
- 2019
- Bibliographic description:
- Bogdanowicz R., Sobaszek M., Sawczak M., Grigorian G., Ficek M., Caban P., Herman A., Cenian A.: Enhanced boron doping of thin diamond films grown in deuterium-rich microwave plasma// DIAMOND AND RELATED MATERIALS. -, (2019), s.198-206
- DOI:
- Digital Object Identifier (open in new tab) 10.1016/j.diamond.2019.05.005
- Verified by:
- Gdańsk University of Technology
seen 154 times