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Fabrication and Significant Photoelectrochemical Activity of Titania Nanotubes Modified with Thin Indium Tin Oxide Film

Abstract

Ordered titanium dioxide nanotubes (TiO2NTs) modified with indium tin oxide (ITO) films were obtained via magnetron sputtering, in which ITO plate was used as a target, onto the as-anodized titania support followed by the calcination process. The morphology of fabricated material with deposited oxide was investigated using scanning electron microscopy. Raman and UV–Vis spectroscopies were utilized to characterize crystalline phase and optical properties of prepared samples, whereas X-ray photoelectron spectroscopy allowed determining the binding energy of present elements. In the case of titanium, three various oxidation states were identified and also the presence of indium and tin was confirmed. The electrochemical test carried out when the sample was exposed to light allows for selection of the most photoactive material. The highest photocurrent was registered when only 5-nm ITO layer was sputtered, and it equals 256 and 133 lA cm-2 for the electrode material immersed in 0.5 M KOH and K2SO4 electrolytes, respectively, that is accordingly 3.5 and 4.4 times higher than the one observed for pristine titania. Furthermore, ITO-modified titania exhibits excellent photostability upon prolonged illumination that is of key importance for possible application in light-driven processes.

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Category:
Articles
Type:
artykuł w czasopiśmie wyróżnionym w JCR
Published in:
Acta Metallurgica Sinica-English Letters no. 30, pages 1210 - 11220,
ISSN: 1006-7191
Language:
English
Publication year:
2017
Bibliographic description:
Siuzdak K., Szkoda M., Karczewski J., Ryl J., Darowicki K., Grochowska K.: Fabrication and Significant Photoelectrochemical Activity of Titania Nanotubes Modified with Thin Indium Tin Oxide Film// Acta Metallurgica Sinica-English Letters. -Vol. 30, nr. 12 (2017), s.1210-11220
DOI:
Digital Object Identifier (open in new tab) 10.1007/s40195-017-0653-9
Verified by:
Gdańsk University of Technology

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