Gate Driver with Overcurrent Protection Circuit for GaN Transistors

Paweł Derkacz; Piotr Musznicki

doi:10.15199/48.2019.02.28

Gate Driver with Overcurrent Protection Circuit for GaN Transistors

Abstract

The improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse Test(DPT) conditions.

Citations

1

CrossRef
0

Web of Science
1

Scopus

Authors (2)

Cite as

Full text

download paper

downloaded 315 times

Publication version: Accepted or Published Version
License: open in new tab

Keywords

WIDE BANDGAP SEMICONDUCTORS, GAN TRANSISTORS, POWER TRANSISTORS, OVERCURRENT PROTECTION, SMPS, GATE CIRCUIT

Details

Category:: Articles
Type:: artykuły w czasopismach
Published in:: Przegląd Elektrotechniczny edition 2, pages 125 - 128,
ISSN: 0033-2097
Language:: English
Publication year:: 2019
Bibliographic description:: Derkacz P., Musznicki P.: Gate Driver with Overcurrent Protection Circuit for GaN Transistors// Przegląd Elektrotechniczny -,iss. 2 (2019), s.125-128
DOI:: Digital Object Identifier (open in new tab) 10.15199/48.2019.02.28
Verified by:: Gdańsk University of Technology