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total: 97
Search results for: EPITAXIAL GALLIUM NITRIDE
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Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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The influence oil additives on spread cracks in silicon nitride
PublicationThe paper presents an experimental study of the influence of oil additives (Cl, S, P, cerium dioxide (CeO2)) on spread cracks in silicon nitride. The additives Cl, S, P are bound in molecules in liquid form soluble in the base oil. The CeO2 is purely in powder form in suspension. The use of CeO2 powder was made based on the good results of polishing of silicon nitride. A ceramic angular contact ball bearing was modelled using a...
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IR and Raman study of oxy-nitride glasses
PublicationVarious silicate and phosphate glasses with and without nitride addition were structurally characterized by IR and Raman spectroscopy. The studied glass systems include Na-Ca-P-O-N (1), AE-Si-O-N (with AE=Mg, Ca, Sr, Ba)(2), La-Si-O-N (3) as well as the Na-(Li)-Be-O-(N) (4,5) system. The samples were prepared by different techniques such as remelting of pre-prepared glass samples of the oxide systems with Mg and/or Si3N4 powders...
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Synthesis and characterization of colloidal gallium selenide nanowires
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Phonons in Iron: From the Bulk to an Epitaxial Monolayer
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Ellipsometric study of carbon nitride films deposited by DC-magnetron sputtering
PublicationWe report the optical properties of a carbon nitride (CNx) film as a function of nitrogen concentration (N/C) of the deposited film. As nitrogen concentration is increased (N/C ratio) in a CNx film, the refractive index and band gap also increase. The real and imaginary parts, n and k (refractive index and extinction coefficient) of the complex refraction index of carbon nitride films were determined by spectroscopic ellipsometry...
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Selected boron, aluminum, and gallium trihalide and trihydride anions
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