The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...

A dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...

A novel non-isolated resonant quasi-impedance (quasi-Z)-source network DC–DC converter is proposed. The resonant impedance source network is derived from the quasi-Z-source network by including the autotransformer-based resonant cell instead of the second inductor of the quasi-Z-network. The leakage inductance of the autotransformer and two resonant capacitors connected in series with the autotransformer windings constitute a high-frequency...

In the paper ringing phenomena in a DC-DC boost converter is presented. The ringing frequency is calculated using an analytical formula. The necessary wide band models of MOSFET transistor, passive and parasitics are described. The calculation results are verified in simulation and laboratory tests.

W artykule zaprezentowano możliwości wykorzystania dławika z odczepem oraz obwodu LC w celu uzyskania warunków miękkiej komutacji kluczy energoelektronicznych w przetwornicy DC-DC.Na podstawie modelu matematycznego zbadany został wpływ wartości elementów na zachowanie miękkiej komutacji.Przedstawiono wyniki badań symulacyjnych i eksperymentalnych.