Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel

Description

The presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg) of the top-gated GFET device.

In this study the GFET device with 10 μm x 3 μm graphene channel, 10 nm top-gate dielectric and 300 nm SiO2 layer was analyzed. The drift-diffusion approach was employed to calculate self-consistently the I-V behavior of the transistor at initial temperature of 293K. The mobility of the both type of carriers (electrons and holes) was 3000 cm2/(V*s) and the Dirac voltage was 0 V.

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GFET_I-V_10um_x_3um.zip

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Year of publication:

2021

Verification date:

2021-03-22

Creation date:

2020

Dataset language:

English

Fields of science:

Automation, electronic and electrical engineering (Engineering and Technology)
materials engineering (Engineering and Technology)
physical sciences (Natural sciences)

DOI:

10.34808/m8g8-5p66

Verified by:

Gdańsk University of Technology

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