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The behavioural model of graphene field-effect transistor

Abstract

The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.

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Category:
Articles
Type:
artykuły w czasopismach
Published in:
International Journal of Electronics and Telecommunications no. 66, pages 753 - 758,
ISSN: 2081-8491
Language:
English
Publication year:
2020
Bibliographic description:
Łuszczek M., Turzyński M., Świsulski D.: The behavioural model of graphene field-effect transistor// International Journal of Electronics and Telecommunications -Vol. 66,iss. 4 (2020), s.753-758
DOI:
Digital Object Identifier (open in new tab) 10.24425/ijet.2020.134037
Verified by:
Gdańsk University of Technology

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