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Abstract
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.
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- Category:
- Articles
- Type:
- artykuły w czasopismach
- Published in:
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International Journal of Electronics and Telecommunications
no. 66,
pages 753 - 758,
ISSN: 2081-8491 - Language:
- English
- Publication year:
- 2020
- Bibliographic description:
- Łuszczek M., Turzyński M., Świsulski D.: The behavioural model of graphene field-effect transistor// International Journal of Electronics and Telecommunications -Vol. 66,iss. 4 (2020), s.753-758
- DOI:
- Digital Object Identifier (open in new tab) 10.24425/ijet.2020.134037
- Verified by:
- Gdańsk University of Technology
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