Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction - Open Research Data - Bridge of Knowledge

Search

Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction

Description

The DataSet contains the XRD patterns of  V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method.  The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C  under synthetic air. 

X-ray diffraction patterns (XRD) were collected on a Philips X’PERT PLUS diffractometer with Cu Ka radiation (1.5406 Å) and ranging from 10 to 80 degrees.

Dataset file

Silicon.zip
152.7 kB, S3 ETag 4e2ad7eeb523086beb7e99f5a60d3212-1, downloads: 7
The file hash is calculated from the formula
hexmd5(md5(part1)+md5(part2)+...)-{parts_count} where a single part of the file is 512 MB in size.

Example script for calculation:
https://github.com/antespi/s3md5
download file Silicon.zip

File details

License:
Creative Commons: by 4.0 open in new tab
CC BY
Attribution
Raw data:
Data contained in dataset was not processed.

Details

Year of publication:
2021
Verification date:
2021-06-22
Dataset language:
English
Fields of science:
  • materials engineering (Engineering and Technology)
DOI:
DOI ID 10.34808/n7zk-px84 open in new tab
Series:
Verified by:
Gdańsk University of Technology

Keywords

References

Cite as

seen 42 times