Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices - Publication - Bridge of Knowledge

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Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices

Abstract

We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

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Category:
Articles
Type:
artykuły w czasopismach
Published in:
APPLIED PHYSICS LETTERS no. 118,
ISSN: 0003-6951
Language:
English
Publication year:
2021
Bibliographic description:
Mohammadzadeh A., Rehman A., Kargar F., Rumyantsev S., Smulko J., Knap W., Lake R. K., Balandin A. A.: Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices// APPLIED PHYSICS LETTERS -Vol. 118,iss. 22 (2021), s.223101-
DOI:
Digital Object Identifier (open in new tab) 10.1063/5.0055401
Verified by:
Gdańsk University of Technology

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