Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices - Publikacja - MOST Wiedzy

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Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices

Abstrakt

We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

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Copyright (2021 AIP Publishing)

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Kategoria:
Publikacja w czasopiśmie
Typ:
artykuły w czasopismach
Opublikowano w:
APPLIED PHYSICS LETTERS nr 118,
ISSN: 0003-6951
Język:
angielski
Rok wydania:
2021
Opis bibliograficzny:
Mohammadzadeh A., Rehman A., Kargar F., Rumyantsev S., Smulko J., Knap W., Lake R. K., Balandin A. A.: Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices// APPLIED PHYSICS LETTERS -Vol. 118,iss. 22 (2021), s.223101-
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1063/5.0055401
Weryfikacja:
Politechnika Gdańska

wyświetlono 114 razy

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