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Search results for: INSULATED GATE BIPOLAR TRANSISTORS
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Accurate Computation of IGBT Junction Temperature in PLECS
PublicationIn the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is...
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Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter
PublicationNowadays, wind turbines based on a doubly fed induction generator (DFIG) are a commonly used solution in the wind industry. The standard converter topology used in these systems is the voltage source inverter (VSI). The use of reverse-blocking insulated gate bipolar transistor (RB-IGBT) in the current source inverter topology (CSI), which is an alternative topology, opens new possibilities of control methods. This paper presents...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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SiC-based T-type modules for multi-pulse inverter with coupled inductors
PublicationThe paper presents SiC-based three-level T-type modules designed for a high-performance 30kVA DC/AC inverter operating at high frequency 85 kHz with low THD of the output voltage. This inverter system consists of two integrated parts. The first part is active and contains three parallelconnected three-phase T-type modules built with fast-switching SiC power transistors. The second, passive part of the system is a set of inductors...
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Przegląd metod monitorowania stanu technicznego tranzystorów mocy
PublicationW artykule przedstawiono kilka metod monitorowania stanu technicznego tranzystorów mocy, które są lub mogą być wbudowane w układy przekształtnikowe. Celem artykułu jest określenie aktualnego stanu badań na ten temat. Prezentowane metody przeznaczone są do monitorowania istotnych objawów starzenia modułów mocy: rozwarstwiania struktury modułu na skutek termomechanicznego zmęczenia stopu lutowniczego, uszkodzeń połączeń drutowych...
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Accurate electrothermal modelling of high frequency DC-DC converters with discrete IGBTs in PLECS software
PublicationIn the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method,...