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Search results for: sqc
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Evaluation of SiC JFETs and SiC Schottky diodes for wind generation systems
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The Low-frequency Noise of SiC MESFETs
PublicationPrzedstawiono system do pomiaru szumów małoczestotliwościowych tranzystorów SiC MESFET oraz przykładowe wyniki pomiarów.
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SVC and power transformers controllers coordination
PublicationThe use of shunt compensators such as FACTS (for example SVC) in power systems gives possibility of fast and flexible control of voltage or reactive power. An efficient cooperation between a transformer and compensator connected to busbars, or transformer’s tertiary winding, requires a proper coordination of controls. The article contains theoretical considerations and simulation results which indicate that such co-ordination is...
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The influence of SVC on the progress of voltage collapse
PublicationThe article presents the simulation concerning the cooperation of SVC circuit with a generative set in time, when of power system reaches low values which may lead to the fall-out of generator from the synchronous operation.
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Resonant Conditions in a Node with an SVC Compensator
PublicationThe primary purpose of installing static shunt compensators in power grids is to improve the voltage conditions. Additional reactive power sources increase the system’s voltage stability and enable faster system recovery after a voltage failure. This paper presents the impact of an SVC device’s structure and settings on impedance change in the supply system, and hence on the frequencies at which resonance phenomena can develop.
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CANCER-AM CANCER SOC
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A SPC strategy for decision making in manufacturing processes
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DFT modelling of the edge dislocation in 4H-SiC
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Wysokoczęstotliwościowy przekształtnik z tranzystorami SiC JFET
PublicationW referacie przedstawiono konstrukcję oraz wyniki badań trójfazowego falownika napięcia zbudowanego z wykorzystaniem diod Schottky oraz tranzystorów JFET z węglika krzemu (SiC). Znacznie krótsze czasy przełączeń tych elementów w porównaniu z tranzystorami IGBT i diodami na bazie krzemu (Si) umożliwiają pracę układu z częstotliwością 100 kHz i wyższą. Duża stromość narastania napięcia rzędu dziesiątek kV/µs powoduje problemy EMC...
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The Low Frequency Noise Behaviour of SiC MESFETs
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