Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review - Publikacja - MOST Wiedzy

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Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review

Abstrakt

Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.

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Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuły w czasopismach
Opublikowano w:
ENERGIES nr 16,
ISSN: 1996-1073
Język:
angielski
Rok wydania:
2023
Opis bibliograficzny:
Ullah H., Czapp S., Szultka S., Tariq H., Bin Qasim U., Imran H.: Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review// ENERGIES -,iss. 2 (2023),
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.3390/en16020715
Źródła finansowania:
  • COST_FREE
Weryfikacja:
Politechnika Gdańska

wyświetlono 84 razy

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