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• The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation

  Publikacja

  • K. Drozdowska
  • S. Rumyantsev
  • J. Smulko
  • A. Kwiatkowski
  • P. Sai
  • P. Prystawko
  • A. Krajewska
  • G. Cywiński

  - SENSORS AND ACTUATORS B-CHEMICAL - Rok 2023

  This work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....

  Pełny tekst do pobrania w portalu

• Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing

  Dane Badawcze

  open access

  • K. Drozdowska
  • J. Smulko

  This data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...